3.4 kV Breakdown Voltage Ga2O3 Trench Schottky Diode with Optimized Trench Corner Radius

High-voltage lateral trench gate SOI-LDMOSFETs

We present a lateral trench gate SOI-LDMOSFET that uses narrow trenches as channels. The lateral trench gate, which allows the channel current to flow laterally on the trench side walls, decreases its on-resistance because it increases the current spreading area of the device. The specific on-resistance ðRspÞ strongly depends on the trench depth, which affects the channel area on the side wall ...

Diode-Free Synchronous Rectification using a SiC Trench JFET

The reverse conduction mode of operation of the SiC trench JFET allows for diode-free synchronous rectification. This paper shows that the reverse conduction mode is an inherent property of the device caused by diffusion of electrons through the source fingers under conditions of moderate gate-drain diode forward bias. Experimental results confirm the expectations for a vertical-channel SiC JFE...

Ageing mechanisms in Deep Trench Termination (DT2) Diode

Dynamically Supported Trench Topography

A viscous flow model of a subduction zone is used to calculate the near-trench deformation and topography of the overriding plate in response to tectonic and buoyancy forces. The tectonic force, which is associated with global plate motion, arises from subduction of a cold oceanic lithosphere that shears the overriding lithosphere along the contact between the two plates. The buoyancy force ari...

From trench fever to endocarditis.

The case of a 44 year old woman with infective endocarditis due to Bartonella quintana, an organism long recognised to cause a condition known as trench fever, is reported. This case illustrates the lengthy differential diagnosis of "culture negative" endocarditis. In addition the presence of serological cross reactivity of Bartonella spp and Chlamydia spp demonstrates the potential for misdiag...